Product Attributes
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 340mA
Rds On (Max) @ Id, Vgs : 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 10V
Power - Max : 350mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : SOT-666
FILL IN THE ORDER REQUIREMENTS
RELATED PRODUCTS
RELATED PRODUCTS
MOSFET N/P-CH 20V SOT363
MOSFET 2N-CH 20V 0.95A SOT363
MOSFET 2P-CH 50V 0.13A SC70-6
MOSFET 2N-CH 20V 1.33A SOT563
MOSFET 2N-CH 50V 0.28A SOT-563
MOSFET 2N-CH 50V 0.28A SOT-563