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APTMC120HM17CT3AG
POWER MODULE - SIC MOSFET

Part Status : IN STOCK
Manufacturer : Microsemi Corporation

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Part Status : Active
FET Type : 4 N-Channel
FET Feature : Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) : 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C : 147A (Tc)
Rds On (Max) @ Id, Vgs : 17 mOhm @ 100A, 20V
Vgs(th) (Max) @ Id : 4V @ 30mA
Gate Charge (Qg) (Max) @ Vgs : 332nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 5576pF @ 1000V
Power - Max : 750W
Operating Temperature : -40°C ~ 175°C (TJ)
Mounting Type : Chassis Mount
Package / Case : Module
Supplier Device Package : SP3

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