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SI2309CDS-T1-GE3
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Vishay Siliconix SI2309CDS-T1-GE3

Part Number SI2309CDS-T1-GE3
Manufacturer Vishay Siliconix
Package / Case SOT-23-3 (TO-236)
Description MOSFET P-CH 60V 1.6A SOT23-3
In Stock We Can Ship Immediately
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Datesheet SI2309CDS-T1-GE3 Datesheet
Guarantee New and original
Category Discrete Semiconductor Products
Filter Transistors - FETs, MOSFETs - Single

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SI2309CDS-T1-GE3 Specifications

Part Number:SI2309CDS-T1-GE3
Brand:Vishay Siliconix
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Vishay Siliconix
Halogen Free:Satisfy
Popularity:High popularity
Supply Demand:Sufficient
Alternative Parts:E-mail Us / Technical Support
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:345 mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4.1nC @ 4.5V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:210pF @ 30V
FET Feature:-
Power Dissipation (Max):1W (Ta), 1.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3

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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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