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Toshiba Semiconductor and Storage HN4B01JE(TE85L,F)
| Part Number | HN4B01JE(TE85L,F) |
| Manufacturer | Toshiba Semiconductor and Storage |
| Package / Case | SOT-553 |
| Description | TRANS NPN/PNP 50V 0.15A ESV PLN |
| In Stock | We Can Ship Immediately |
| Unit Price | Request a Quote |
| Datesheet | HN4B01JE(TE85L,F) Datesheet |
| Guarantee | New and original |
| Category | Discrete Semiconductor Products |
| Filter | Transistors - Bipolar (BJT) - Arrays |
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HN4B01JE(TE85L,F) Specifications
| Part Number: | HN4B01JE(TE85L,F) |
| Brand: | Toshiba Semiconductor and Storage |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Arrays |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Halogen Free: | Satisfy |
| Popularity: | High popularity |
| Supply Demand: | Sufficient |
| Alternative Parts: | E-mail Us / Technical Support |
| Part Status: | Active |
| Transistor Type: | NPN, PNP (Emitter Coupled) |
| Current - Collector (Ic) (Max): | 150mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 10MA, 100MA |
| Power - Max: | 100mW |
| Frequency - Transition: | 80MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SOT-553 |
| Supplier Device Package: | ESV |
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- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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